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MJF47 High Voltage Power Transistor
Isolated Package Applications
Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB Value 250 350 5 Unit Vdc Vdc Vdc V Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage RMS Isolation Voltage (Note 1) Test No. 1 Per Figure 10 Test No. 2 Per Figure 11 Test No. 3 Per Figure 12 (for 1 sec, R.H. < 30%, TA = 25_C) Collector Current - Continuous - Peak VISOL 4500 3500 1500 1 2 IC IB Adc Adc Base Current - Continuous 0.6 Total Power Dissipation (Note 2) @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD 40 0.31 W W/_C W W/_C _C 2.0 0.016 Operating and Storage Temperature Range TJ, Tstg -65 to +150
* * * * * * *
Electrically Similar to the Popular TIP47 250 VCEO(sus) 1 A Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation Pb-Free Package is Available*
NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS, 28 WATTS
1
2
3
TO-220 FULLPACK CASE 221D STYLE 2
MARKING DIAGRAM
MJF47G AYWW
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC
Max 4.4
Unit
Thermal Resistance, Junction-to-AmbientIIII 62.5 RqJA Thermal Resistance, Junction-to-Case (Note 2)
_C/W _C/W
G A Y WW
= Pb-Free Package = Assembly Location = Year = Work Week
Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. 2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
ORDERING INFORMATION
Device MJF47 MJF47G Package TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJF47/D
April, 2006 - Rev. 5
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V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
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3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Current Gain - Bandwidth Product (IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)
Base-Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc)
DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 350 Vdc, VBE = 0)
Collector Cutoff Current (VCE = 150 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0)
100
200
10
20
60 40
6 4
2 0.02
TJ = 150C
-55 C
0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS)
25C
Figure 1. DC Current Gain
Characteristic
TYPICAL CHARACTERISTICS
VCE = 10 V
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MJF47
2 0.6 1.4 0.2 0.4 0.8 1.2 0 0.02 1 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICES hFE fT VBE(sat) @ IC/IB = 5 VCE(sat) @ IC/IB = 5 V VBE(on) @ VCE = 4 V Min 250 TJ = 25C 10 30 10 - - - - - 150 - 1.5 0.1 0.2 - 1 1 -
Figure 2. "On" Voltages
MaxIIII Unit 1 mAdc mAdc mAdc MHz Vdc Vdc Vdc - 2
MJF47
1 0.5 0.2 0.1 0.05 td tr TJ = 25C VCC = 200 V IC/IB = 5 t, TIME ( s) 5 ts 2 1 0.5 0.2 0.1 0.05 0.02 tf TJ = 25C VCC = 200 V IC/IB = 5
t, TIME ( s)
0.02 0.01 0.02 0.05 0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS) 1 2
0.05
0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) APPROX +11 V Vin t2 TURN-OFF PULSE t1 t3
VCC RC Vin 51 SCOPE RB Cjd << Ceb t1 7 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE 2% APPROX -9 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. -4 V
Figure 5. Switching Time Equivalent Circuit
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (msec) 100 200 300 500 1K 2K 3K 5K 10 K SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 4.4C/W MAX TJ(pk) - TC = P(pk) RqJC(t)
Figure 6. Thermal Response
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MJF47
IC, COLLECTOR CURRENT (AMPS) 3 2 1 dc 500 ms 1 ms 100 ms
0.5 0.3 0.2 0.1
0.05 0.03 10
CURRENT LIMIT THERMAL LIMIT @ TC = 25C SECONDARY BREAKDOWN LIMIT 20 30 50 200 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 7. Maximum Forward Bias Safe Operating Area
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
40
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
2
30
1.5
20
1
10
0.5
0
0
50
100
150
200
0
0
50
100
150
200
TC, CASE TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 8. Power Derating
Figure 9. Power Derating
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MJF47
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.099" MIN LEADS
0.099" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 10. Clip Mounting Position for Isolation Test Number 1
Figure 11. Clip Mounting Position for Isolation Test Number 2
Figure 12. Screw Mounting Position for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 13. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
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MJF47
PACKAGE DIMENSIONS
TO-220 FULLPAK CASE 221D-03 ISSUE G
-T- F Q A
123
SEATING PLANE
-B-
C S U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56
H K
-Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MJF47/D

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